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Investigating the effect of thermal strain on the valence band structure and hole mobility of silicon-based Hall bars

Hendriks, Attie (2025) Investigating the effect of thermal strain on the valence band structure and hole mobility of silicon-based Hall bars.

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Full Text Status:Access to this publication is restricted
Embargo date:17 April 2027
Item Type:Essay (Master)
Faculty:EEMCS: Electrical Engineering, Mathematics and Computer Science
Programme:Electrical Engineering MSc (60353)
Link to this item:https://purl.utwente.nl/essays/106193
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