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Understanding broadband emission in UTB SOI PIN diodes : characterisation and feasibility study
Szybisty, Zuzanna (2025) Understanding broadband emission in UTB SOI PIN diodes : characterisation and feasibility study.
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| Abstract: | CMOS compatible optical elements have long been researched to create low-cost fully integrated electro-optic circuits. This work investigates novel silicon gated PIN diodes fabricated in the CMOS 22FDX technology, focusing on their emission characteristics, electrical properties and possible applications. Optical and electrical measurements were completed, notably including emission spectra, responsivity, IV and gate characteristics. Emission over 600nm range with multiple peaks was observed, attributed to strong phonon replicas. Quantum confinement in the structure led to the main emission peak at 1080nm, blue shifted 41meV from the bulk Si emission at 1120nm. Among the analysed variants the silicon germanium injector diodes were found the most efficient with emission further enhanced (up to two times) via electrostatic doping of the channel. These effect was investigated via the measurements and the technology computer-aided design simulations to understand the underlying physics. Emission efficiency was found too low for majority of the optical applications, but the unusually wide spectra extending to telecommunications wavelengths and the emission below silicon bandgap are unique properties, which could be still pursued in some applications. The newly gained knowledge on those diodes provides a better understanding of their physical principles and will direct the future designs and research. |
| Item Type: | Essay (Master) |
| Faculty: | EEMCS: Electrical Engineering, Mathematics and Computer Science |
| Subject: | 53 electrotechnology |
| Programme: | Electrical Engineering MSc (60353) |
| Link to this item: | https://purl.utwente.nl/essays/107601 |
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