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The applicability of SrTiO3 in memristive devices : a preliminary investigation
Dalfsen, T. van and Dam, J. van (2013) The applicability of SrTiO3 in memristive devices : a preliminary investigation.
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| Abstract: | A Memristor has the ability to remember its resistance when no bias is applied, making it suitable for numerous applications in, e.g., data storage and neuromorphic circuitry. HP already demonstrated a working memristor using TiO2. In this report SrTiO3 (STO) was considered in the fabrication of an oxygen vacancy based memristor on a Nb-doped STO substrate. A model to fabricate such a device is presented as well as the measure- ments characterizing the different layers in this memristor. Measuring STO proved to be challenging, piercing through thin layers and the forming of Schottky barriers with different materials need to be taken into account. Ultimately switching behaviour in a single layer was observed, leading to the conclusion that STO still is a good candidate for memristive applications. |
| Item Type: | Essay (Master) |
| Faculty: | TNW: Science and Technology |
| Subject: | 33 physics |
| Programme: | Applied Physics MSc (60436) |
| Link to this item: | https://purl.utwente.nl/essays/65060 |
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