University of Twente Student Theses
The UTB Electron-Hole Bilayer LED
Mema, Florian (2018) The UTB Electron-Hole Bilayer LED.
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| Abstract: | Electrostatic doping is emerging as an alternative for nanometer-scale or ultrathin-body (UTB) semiconductor devices, given the constraints of chemical doping in UTB layers. This paper aims to perform a technology computer aided design (TCAD) simulation study on a new form of electrostatic doping in a light-emitting diode (LED): the electron-hole bilayer LED. As the name suggests an electron-hole bilayer has formed, in a vertical p-n junction configuration, by means of work-function induced doping and application of bias voltage on the gates. As has been reported before, this electron-hole bilayer concept can also be used in other types of devices, such as tunnel FETs. |
| Item Type: | Essay (Bachelor) |
| Faculty: | EEMCS: Electrical Engineering, Mathematics and Computer Science |
| Subject: | 53 electrotechnology |
| Programme: | Electrical Engineering BSc (56953) |
| Link to this item: | https://purl.utwente.nl/essays/77046 |
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