The UTB Electron-Hole Bilayer LED

Electrostatic doping is emerging as an alternative for nanometer-scale or ultrathin-body (UTB) semiconductor devices, given the constraints of chemical doping in UTB layers. This paper aims to perform a technology computer aided design (TCAD) simulation study on a new form of electrostatic doping in a light-emitting diode (LED): the electron-hole bilayer LED. As the name suggests an electron-hole bilayer has formed, in a vertical p-n junction configuration, by means of work-function induced doping and application of bias voltage on the gates. As has been reported before, this electron-hole bilayer concept can also be used in other types of devices, such as tunnel FETs.