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The UTB Electron-Hole Bilayer LED

Mema, Florian (2018) The UTB Electron-Hole Bilayer LED.

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Abstract:Electrostatic doping is emerging as an alternative for nanometer-scale or ultrathin-body (UTB) semiconductor devices, given the constraints of chemical doping in UTB layers. This paper aims to perform a technology computer aided design (TCAD) simulation study on a new form of electrostatic doping in a light-emitting diode (LED): the electron-hole bilayer LED. As the name suggests an electron-hole bilayer has formed, in a vertical p-n junction configuration, by means of work-function induced doping and application of bias voltage on the gates. As has been reported before, this electron-hole bilayer concept can also be used in other types of devices, such as tunnel FETs.
Item Type:Essay (Bachelor)
Faculty:EEMCS: Electrical Engineering, Mathematics and Computer Science
Subject:53 electrotechnology
Programme:Electrical Engineering BSc (56953)
Link to this item:http://purl.utwente.nl/essays/77046
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