Investigation of Ferroelectricity in Barium Titanate thin-films and fabrication of BTO based Ferroelectric Tunnel Junctions using UV & E-Beam lithography

Heterostructures of perovskite oxides have attracted much attention due to enormous different electrical, magnetic and optical properties [Baek & Eom]. Meanwhile, stabilized integration of these structures on silicon, makes it possible to incorporate unique electronic properties with Silicon-device technology which is highly desirable. However perovskites are incompatible with silicon processing line as the latter is an oxygen sensitive technology while the former is usually fabricated in presence of high oxygen pressure. This work focuses on fabrication and characterization of bottom electrode and ferroelectric layers of FTJ as well as fabrication and characterization of top electrode in cleanroom.