Electron Transport through single-bismuth transistors

The need for quantum computation is becoming more relevant each day. Electron spins bound to a dopant in single-atom transistors are one way to realize the fundamental component for quantum computation: the quantum bit. Now an important step to take is finding the ideal dopant for these transistors. Here, we study electron transport through electron states of individual bismuth atoms implanted in silicon. The devices make use of multiple different gates that provide a high-level of control over the measured region in the device. We successfully identify transitions corresponding to charge states of single-atoms. A device is found of which the charging energies observed fall within the expected boundaries for single bismuth donors in silicon-based gated nanostructures.