University of Twente Student Theses

Login

Electron Transport through single-bismuth transistors

Sibma, Steven (2019) Electron Transport through single-bismuth transistors.

[img] PDF
7MB
Abstract:The need for quantum computation is becoming more relevant each day. Electron spins bound to a dopant in single-atom transistors are one way to realize the fundamental component for quantum computation: the quantum bit. Now an important step to take is finding the ideal dopant for these transistors. Here, we study electron transport through electron states of individual bismuth atoms implanted in silicon. The devices make use of multiple different gates that provide a high-level of control over the measured region in the device. We successfully identify transitions corresponding to charge states of single-atoms. A device is found of which the charging energies observed fall within the expected boundaries for single bismuth donors in silicon-based gated nanostructures.
Item Type:Essay (Bachelor)
Faculty:EEMCS: Electrical Engineering, Mathematics and Computer Science
Subject:30 exact sciences in general, 33 physics, 53 electrotechnology
Programme:Electrical Engineering BSc (56953)
Link to this item:http://purl.utwente.nl/essays/77817
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page