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Implementation of silicon nitride isolation trenches in SOI MEMS accelerometers

Laerhoven, B.J.A. van (2021) Implementation of silicon nitride isolation trenches in SOI MEMS accelerometers.

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Abstract:This paper presents the design of two capacitive SOI MEMS accelerometers. Both accelerometer designs use Silicon Nitride isolation trenches to create new methods for readout or actuation of the microchips. Both accelerometer designs maximise the available area of the microchip by using a readout structure suspended above the mass. The readout structure is realised in the device layer, the mass is located in the handle layer. One accelerometer design used EMAM to bring the readout structure to an oscillation. An extra modulation reduces the effects of outside parasitic sources. To test the accelerometers a measurement setup is designed and built, preliminary results show that the measurement setup functions as intended. The fabrication of the accelerometers could not be completed but the simulations show a functioning of the EMAM principle which reduces outside parasitic influences, and suppresses unwanted frequencies with a double demodulation. The expected sensitivity of both the chips is 3pf /µm.
Item Type:Essay (Master)
Faculty:EEMCS: Electrical Engineering, Mathematics and Computer Science
Subject:51 materials science, 52 mechanical engineering, 53 electrotechnology
Programme:Electrical Engineering MSc (60353)
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