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Exploratory Research Into Accurate And Consistent Resistivity Measurements Of Highly-doped Silicon At High Temperatures.

Holm, L. (2021) Exploratory Research Into Accurate And Consistent Resistivity Measurements Of Highly-doped Silicon At High Temperatures.

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Abstract:There is a need for a sensible thermal heating en sensing solution in MEMS devices like microreactors or microthrusters. One solution could be highly doped bulk-Silicon resistors embedded into these devices. Unfortunately, to the author’s best knowledge, there has been no research yet on the resistivity of highly doped silicon at high temperatures. To use bulk- Si resistors as a sensing solution, the resistivity has to be characterized and must be predictable for multiple doping concentrations. This research uses a custom vacuum chamber containing heaters and a 4 point setup to attempt to determine the resistivity of highly doped silicon samples at elevated temperatures. Through structured experiments, the flaws of the setup and its implication on the resulting measurements are mapped. In its current state, the setup is not suitable to gain accurate and precise insight into the resistivity of highly doped silicon at high temperatures due to (a) the great influence the heater has on the measurement results and (b) the fact that the used software misinterprets the measurement data. Multiple recommendations are made that may provide a basis for further research into the setup.
Item Type:Essay (Bachelor)
Faculty:EEMCS: Electrical Engineering, Mathematics and Computer Science
Subject:50 technical science in general, 51 materials science, 53 electrotechnology
Programme:Electrical Engineering BSc (56953)
Link to this item:https://purl.utwente.nl/essays/89423
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