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Hall effect and field-effect measurements of tin telluride nanowire devices for novel topological quantum computation

Kareem, J. (2022) Hall effect and field-effect measurements of tin telluride nanowire devices for novel topological quantum computation.

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Abstract:We electrically characterize tin telluride nanowire devices by employing the Hall effect, where we focus on the determination of the carrier concentration and additionally the mobility. Our interest in electrically characterizing these selective-area grown nanowires is to lay the groundwork for the depletion of tin telluride’s highly conductive bulk. Depletion of the bulk is necessary in order to identify unique conducting topological states on the nanowire’s surface that could be used as robust, topological qubits. We also extensively investigate the nanowire-to-gate capacitance by modelling our device geometry using the finite-element method, from which we estimate the carrier concentration that can be depleted by the field-effect to be 3e+18 cm⁻³ for a 10 V gate voltage. We find that the carrier concentration of our newest devices varies between 4.7 and 7.9e+20 cm⁻³, and the mobility ranges between 60 and 135 cm²/Vs. We conclude that our nanowires are indeed not depletable, but we still intend to measure more of these devices for a better picture of their electrical properties. Moving forward, we will electrically characterize lead tin telluride nanowires that are predicted to be less bulk-conductive and attempt depletion in these devices.
Item Type:Essay (Bachelor)
Faculty:EEMCS: Electrical Engineering, Mathematics and Computer Science
Subject:33 physics, 50 technical science in general, 51 materials science, 53 electrotechnology
Programme:Electrical Engineering BSc (56953)
Awards:Best scientific work of a BSc thesis in Electrical Engineering of the academic year 2021/2022
Link to this item:https://purl.utwente.nl/essays/91739
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