University of Twente Student Theses
Optimisation of the silicon drift detector
Wijngaarden, Bas van (2022) Optimisation of the silicon drift detector.
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| Full Text Status: | Access to this publication is restricted |
| Embargo date: | 29 August 2032 |
| Abstract: | X-ray fluorescent (XRF) measurements are a widespread and straightforward method to detect chemical elements in a sample. The most favoured XRF method is energy dispersive XRF (EDXRF) because of the simplicity of the technique. However, the silicon drift detector (SDD), a key component in the EDXRF detection chain, is a limiting aspect; pulses from the detector are slow compared to the other electronics. Furthermore, accurate simulations analysing the pulse duration of the signal from the SDD are not yet publicly available. A need for such a simulation exists since it facilitates the opportunity to optimise the SDD. Therefore, a model that visually and physically represents the pulse formation inside the SDD is built in TCAD software. It was required to post-process the simulated data to include the Shockley-Ramo theorem in the model; this theorem can not be activated in TCAD simulations. Experimental tests on the rise time of pulses from various SDDs verify the model’s performance. Tests with the model find the influence of different physical parameters on the pulse formation: different wafer resistivities, other biasing conditions, and various operating temperatures. Ultimately, it is concluded that the SDD is optimised by operating it at a lower temperature and modifying its biasing scheme that is tuned for a specific wafer resistivity range. |
| Item Type: | Essay (Master) |
| Clients: | Malvern Panalytical, Almelo, Netherlands |
| Faculty: | EEMCS: Electrical Engineering, Mathematics and Computer Science |
| Subject: | 33 physics, 53 electrotechnology |
| Programme: | Electrical Engineering MSc (60353) |
| Link to this item: | https://purl.utwente.nl/essays/92905 |
| Export this item as: | BibTeX EndNote HTML Citation Reference Manager |
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