University of Twente Student Theses


Performance of GaN-based Bidirectional Switch using Two-Dimensional Device Simulations

Bovenkamp, J.P. van de (2023) Performance of GaN-based Bidirectional Switch using Two-Dimensional Device Simulations.

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Embargo date:4 May 2026
Abstract:In this work, the performance of both a single-gate and a dual-gate GaN bidiswitch is studied through a brief literature survey and using two-dimensional technology computer-aided design (-TCAD) device simulations. Both the specific on-state resistance and the breakdown voltage, important figures-of-merit of power devices, are calculated by varying the drift region(s) of both bidiswitches and compared with both experimental and simulation data reported in the literature. Additionally, the influence of the contact resistance is discussed. This was done because GaN is ideal for high power and high-voltage devices due to its wide bandgap, but wide bandgap materials are known to have relatively high contact resistances. Further, all reported GaN bidiswitches are in normally-off (or enhancement-) mode, while in this work the normally-on (or depletion-) mode structures is studied because those are relatively easy to produce, and in-house data is available. It is shown that for small (low-voltage) devices the contact and channel resistances are dominant while for large (high-voltage) devices the access or drift resistances are dominant. Below a breakdown voltage of 400V, a single-gate GaN bidiswitch is favorable while for higher voltages a dual-gate structure is advantageous. In addition, for high voltages GaN is ideal, while for voltages below 80V silicon bidiswitches offer a lower specific on-state resistance thus power dissipation. For further reduction of the specific on-state resistance also the contact and channel resistances need to be decreased. Finally, the obtained TCAD simulated data is close to reported experimental data.
Item Type:Essay (Bachelor)
Faculty:EEMCS: Electrical Engineering, Mathematics and Computer Science
Subject:53 electrotechnology
Programme:Electrical Engineering BSc (56953)
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