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The influence of annealing on gate-defined quantum dot devices

Ven, B. van de (2015) The influence of annealing on gate-defined quantum dot devices.

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Full Text Status:Access to this publication is restricted
Item Type:Essay (Bachelor)
Faculty:TNW: Science and Technology
Subject:33 physics, 53 electrotechnology
Programme:Advanced Technology BSc (50002)
Link to this item:https://purl.utwente.nl/essays/67528
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