Maximizing the piezoelectric properties of thin film Pb(mg1/3Nb2/3)O3-PbTiO3

Thin films of PMN-PT have been successfully grown on substrates of STO, as well as on silicon. For the deposition of PMN-PT on silicon, buffer layers of YSZ and CeO2 were used. It is not yet achieved to grow a pure perovskite, epitaxial, (001)-orientated film of PMN-PT on a silicon substrate without a layer of STO. In the Si/YSZ/CeO2/LNO/PMN-PT sample the pyrochloric (004)-orientation is still present. Next to that there are more perovskite orientations because the layer underneath, LNO, did not grow epitaxial. Nevertheless, the P-E loop looks good. Due to a lack of time the e31;f coefficient is not yet determined. The d33 coefficient of the STO/LNO/PMN-PT and the Si/STO/LNO/PMN-PT sample have been determined to be 135 and 100 pm/V respectively, which compared to PZT is not that high.