University of Twente Student Theses
A 1.35 - 8.85 GHz SiGe:C HBT Cryogenic LNA with 45 K Minimum Noise Temperature
Chien, DingJie (2024) A 1.35 - 8.85 GHz SiGe:C HBT Cryogenic LNA with 45 K Minimum Noise Temperature.
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| Abstract: | An impedance matched low-noise 1.35 - 8.85 GHz single stage common emitter amplifier utilizing SiGe:C HBT device simulated at 18 K has achieved 10 ± 0.5 dB of gain (S21) across 3 - 7.5 GHz, and reflection coefficient (S11) less than -15 dB across 4 - 9.5 GHz. The circuit design utilized a SiGe:C HBT (BFP760) model from Infineon Technologies. Due to transistor and simulator limitation, noise matching has not been implemented, resulting in an average noise temperature of 49 K over 5 - 9.5 GHz. The LNA is self-biased using collector feedback biasing to increase stability. Additionally, inductive emitter degeneration has been implemented to improve RF noise performance. This LNA is designed to work as part of amplification chain for Josephson Radiation readout. As a proof of concept, the design demonstrates that it is possible to achieve a gain target of 18.6 dB in the 4 - 12 GHz range at 4 K with a cascade design. |
| Item Type: | Essay (Bachelor) |
| Faculty: | EEMCS: Electrical Engineering, Mathematics and Computer Science |
| Subject: | 53 electrotechnology |
| Programme: | Electrical Engineering BSc (56953) |
| Link to this item: | https://purl.utwente.nl/essays/102823 |
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