A simulation study and analysis of advanced silicon Schottky barrier field effect transistors

Boksteen, B.K. (2010) A simulation study and analysis of advanced silicon Schottky barrier field effect transistors.

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Abstract:The goal of this work is to investigate, through device simulations and a literature study, various device characteristics across both symmetric and asymmetric SB-FET designs while focusing on expanding the characterization of the novel asymmetric Schottky Tunneling Source SOI MOSFET (STS-FET) proposed by Jhaveri in [20-23].
Item Type:Essay (Master)
Faculty:EEMCS: Electrical Engineering, Mathematics and Computer Science
Subject:53 electrotechnology
Programme:Electrical Engineering MSc (60353)
Link to this item:http://purl.utwente.nl/essays/59426
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