Low series resistance structures for gate dielectrics with a high leakage current

Tiggelman, M.P.J. (2005) Low series resistance structures for gate dielectrics with a high leakage current.

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Abstract:Over the succession of chapters, this master thesis describes: 1. the consequences of the gate oxide shrinkage on electrical device characterization, a major issue concerns the large tunneling currents through the oxide and a relatively high value of the series resistance. Reciprocally, these parameters are related to the device performance. 2. the approach to successfully handling these issues, 3. a solution that should allow an accurate characterization. Radio frequency (RF) test structures are designed from which a capacitancevoltage (C-V ) curve can be obtained. Electrical device parameters can be extracted from the intrinsic RF C-V curve by using a simulation model
Item Type:Essay (Master)
Faculty:EEMCS: Electrical Engineering, Mathematics and Computer Science
Subject:53 electrotechnology
Programme:Electrical Engineering MSc (60353)
Link to this item:http://purl.utwente.nl/essays/59759
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