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The applicability of SrTiO3 in memristive devices : a preliminary investigation

Dalfsen, T. van and Dam, J. van (2013) The applicability of SrTiO3 in memristive devices : a preliminary investigation.

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Abstract:A Memristor has the ability to remember its resistance when no bias is applied, making it suitable for numerous applications in, e.g., data storage and neuromorphic circuitry. HP already demonstrated a working memristor using TiO2. In this report SrTiO3 (STO) was considered in the fabrication of an oxygen vacancy based memristor on a Nb-doped STO substrate. A model to fabricate such a device is presented as well as the measure- ments characterizing the di�erent layers in this memristor. Measuring STO proved to be challenging, piercing through thin layers and the forming of Schottky barriers with di�erent materials need to be taken into account. Ultimately switching behaviour in a single layer was observed, leading to the conclusion that STO still is a good candidate for memristive applications.
Item Type:Essay (Master)
Faculty:TNW: Science and Technology
Subject:33 physics
Programme:Applied Physics MSc (60436)
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