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Switching behavior of AMLEDS for implementation in opto-coupling devices on CMOS chips

Meyere, K,P. de (2015) Switching behavior of AMLEDS for implementation in opto-coupling devices on CMOS chips.

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Abstract:The use of Complementary Metal-Oxide Semiconductor (CMOS) chips is becoming more predominant in every day life, it being included in general appliances such as cell phones, televisions and tablets, to name a few. They are often used as control systems that operate at a much lower voltage than the system it controls and must work in electrical isolation from it. One method of doing so is to use an opto-coupling device that connects the two circuits using EM waves. An opto-coupling device often has a substantial power consumption but a solution was proposed by A.J. Annema et al. to reduce this by using a Single Photon Avalanche Detector (SPAD) on the receiving end and an Avalanche Mode Light Emitting Diode (AMLED). The AMLED would have to emit a minimal amount of photons for it to be detected and can be turned off much faster and efficiently than a forward LED. Using these components would lead to reduced power consumption and less interference on the rest of the system due to changing magnetic or electric field. The problem with the AMLED is that its switching behavior is not well defined and is most likely influenced by dead time, a period of time in which there are no mobile carriers in the depletion layer. The assignment was to investigate the existence and effect of dead time in a semiconductor through simulations and experiments. Through the use of Sentaurus, a simulation program, and experimental set-ups it was attempted to find the effects of the dead time. In the end there were no conclusive results as the simulation software ignored the probabilities of avalanching, making it avalanche every time possible and the experiments could not find evidence of the dead time due to the large amount of charge injected by the saturation current of the transistor used. A possible solution to make the experiments described in this report work is to employ a transistor with a low saturation current, in the order of pA.
Item Type:Essay (Bachelor)
Faculty:EEMCS: Electrical Engineering, Mathematics and Computer Science
Subject:50 technical science in general
Programme:Advanced Technology BSc (50002)
Link to this item:http://purl.utwente.nl/essays/68098
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