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Single charge transport and charge sensing in quantum dots
Avgidis, F. (2016) Single charge transport and charge sensing in quantum dots.
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| Abstract: | As we approach the theoretical limit of the transistor size, finding new ways to process digital information is crucial. A computing device that exploits the laws of quantum mechanics can potentially achieve significant speed-up over its classical counterparts in certain problems and applications. Based on the proposal of using the spin orientation of a single electron trapped in a semiconductor quantum dot as a carrier of classical information, we investigate the charge transport in single and double quantum dots defined by the electrostatic gating of a carrier gas in silicon for cryogenic temperatures. Furthermore, we demonstrate that the gated quantum dot can act as a single-charge transistor and as a charge sensor. We report experiments and findings on two devices with different architecture, for both electron and hole transport down to the few-charge regime. |
| Item Type: | Essay (Bachelor) |
| Faculty: | EEMCS: Electrical Engineering, Mathematics and Computer Science |
| Subject: | 33 physics, 53 electrotechnology |
| Programme: | Electrical Engineering BSc (56953) |
| Link to this item: | https://purl.utwente.nl/essays/69376 |
| Export this item as: | BibTeX EndNote HTML Citation Reference Manager |
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