Electrostatically defined quantum dots in a two dimensional electron/hole gas at the Si and SiO2 interface

Vervoort, M.W.S (2017) Electrostatically defined quantum dots in a two dimensional electron/hole gas at the Si and SiO2 interface.

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Abstract:In this thesis electrostatically defined quantum dots formed in a two dimensional electron/hole gas are investigated. Until now, only quantum dots have been made in intrinsic silicon by accumulating charge carriers while in this project the main focus is on defining a quantum dot by means of depletion. The devices used in this thesis are made from a Si − SiO2 − Al2O3 layer stack with a metal gate on top. At the interface of SiO2 − Al2O3 negative fixed charge is present attracting free holes at the Si − SiO2 interface, acting as a two dimensional hole gas. These holes are spatially confined into a quantum dot with the use of metal gates. By making use of literature, device iterations and a finite element method simulation, a close to optimal depletion hole dot design is presented. This depletion hole dot made from palladium is shown to be stable with transport measurements up to the possible few hole regime. Additionally a single electron dot made from titanium is shown to be stable over more than 30 charge transitions.
Item Type:Essay (Master)
Clients:
1991, Netherlands
Faculty:EEMCS: Electrical Engineering, Mathematics and Computer Science
Subject:33 physics
Programme:Electrical Engineering MSc (60353)
Link to this item:http://purl.utwente.nl/essays/72336
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