University of Twente Student Theses
Temperature Independent, Low Reference voltage
Bakker, J.H.T. (2018) Temperature Independent, Low Reference voltage.
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| Abstract: | The change in bandgap of a silicon diode, due to applied strain, was experimentally studied for a wide temperature range (5K to 473K). The strain was then estimated, and a simulated change in bandgap was leveraged in a new bandgap reference circuit which should result in a lowered reference voltage. Such a circuit could then potentially be utilised in modern circuits. The estimated bandgap difference was found to be between 1.3mV to 8.0mV depending on the type of diode and the assumption that the strain is not temperature dependent. The corresponding strain was found to be between -0.007% to -0.054% and the simulated reference voltage did indeed become lower. The new bandgap reference circuit has a strong potential, also for cryogenic ambient, however the way to apply strain should first be understood completely and optimised. |
| Item Type: | Essay (Bachelor) |
| Faculty: | EEMCS: Electrical Engineering, Mathematics and Computer Science |
| Subject: | 53 electrotechnology |
| Programme: | Electrical Engineering BSc (56953) |
| Link to this item: | https://purl.utwente.nl/essays/75236 |
| Export this item as: | BibTeX EndNote HTML Citation Reference Manager |
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