University of Twente Student Theses

Login

Efficiency comparison between Si and GaN based triple half bridge BLDC motor drivers

Schonewille, K.R. (2020) Efficiency comparison between Si and GaN based triple half bridge BLDC motor drivers.

[img] PDF
3MB
Abstract:Many battery powered applications such as unmanned aerial vehicles and personal electric vehicles rely on brushless direct current (BLDC) motors and their complementary three-phase drivers. Efficiency is critical in these applications, as the goal is to achieve optimal performance in a small package size. The efficiency of BLDC motor drivers is continuously improving as a result of developments in silicon (Si) semiconductor technology. However, Moore's law now shows that the theoretical limits of Si technology are almost reached. This had led to the exploration of new materials in order to further advance semiconductor technology. Gallium nitride (GaN) is one of these materials that has the potential for higher achievable efficiencies in BLDC motor drives. In this research, two triple half bridge BLDC motor drivers are designed, one based on Si power metal-oxide-semiconductor field-effect transistors and one based on enhancement mode GaN high electron mobility transistors. In both systems, parameters that have an effect on drive efficiency are studied. The losses in a BLDC motor driver mostly consist of conduction losses, switching losses and diode losses. For this reason, on-state resistance, turn-on time, turn-off time and diode forward voltage are the main focus.
Item Type:Essay (Bachelor)
Faculty:EEMCS: Electrical Engineering, Mathematics and Computer Science
Subject:53 electrotechnology
Programme:Electrical Engineering BSc (56953)
Link to this item:http://purl.utwente.nl/essays/82049
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page