University of Twente Student Theses


Optimization of a single-electron transistor for charge sensing

Bijl, Y.J. van der (2022) Optimization of a single-electron transistor for charge sensing.

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Abstract:Quantum computers are a promising tool for computations of nanostructures and interactions between atoms. Quantum computers rely on qubits. Spin qubits are qubits that are based on the spin state of for instance an electron. The read-out of the spin state of these electrons can be done using single-electron transistors. These single-electron transistors can detect when an electron has tunneled from a donor atom, for instance bismuth. In this research, single-electron transistors are optimized for charge sensing. This is done by investigating the influence of various gate electrodes and the influence of the combination of bismuth implantation and Rapid Thermal Annealing. The source-drain voltage results in higher currents, but has no effect on the turn-on and pinch-off voltage. The plunger gate voltage shifts the turn-on voltage and the pinch-off voltages. The lead gate voltage can be used to make an intentional quantum dot more distinguishable from an unintentional quantum dot. Rapid thermal annealing did not have the intended influence, as charge traps were still present and even an offset was introduced in a device. The offset could be caused by an overlap between the implantation area and the SET. For future research, the implantation method needs to be adjusted so the implantation window is known not to lay beneath the architecture of the single-electron transistor. To get a better indication of the exact influence of rapid thermal annealing, I would recommend measuring more devices and measuring the electrical activation yield of the bismuth atoms before and after rapid thermal annealing.
Item Type:Essay (Bachelor)
Faculty:EEMCS: Electrical Engineering, Mathematics and Computer Science
Subject:33 physics, 53 electrotechnology
Programme:Electrical Engineering BSc (56953)
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